Today’s mobile devices are smarter than ever. Recent innovations are enabling entirely new ways of interacting with smartphones, including advanced user authentication, AR, language recognition and more personalized imaging capabilities. These user experiences are made possible by artificial intelligence (AI) engines embedded inside of today’s smartphones.
But these AI engines aren’t useful unless they’re fed with really fast local data.
Micron’s innovative 64-layer triple-level cell (TLC) 3D NAND technology delivers the speed and features modern smartphones require, with dramatically higher storage capacity and blazing fast performance.
![]() |
High-Capacity Storage |
![]() |
Industry-Leading Write Performance |
![]() |
UFS 2.1 High-Speed Gear 3 Interface |
![]() |
Improved Reliability |
![]() |
Power Efficiency |
2 Floating gate technology uses isolated charge storage nodes for superior cell-to-cell charge isolation, delivering higher data retention and reliability.