MT60B2G8HB-48B

MT60B4G4, MT60B2G8, MT60B1G16, MT60B4G4HB-52B

16Gb DDR5 SDRAM Die Rev A

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.

Company statement regarding REACH SVHC compliance

Rev. 2.5 (Die Rev. A)

Rev 2.0 (Die Rev. A)

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.

Describes design considerations for bare die SiPs and MCMs.