1.35V DDR3Lm SDRAM Addendum MT41K256M8, MT41K128M16

Revision 2.2 (Die Rev. K)

Revision 2.2 (Die Rev. K)

1.74

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

Describes bypass capacitor selection for high-speed designs.

Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life

Explanation of Micron packaging labels and procedures.

Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs.