HBM2E Memory

High-bandwidth memory (HBM) is the fastest DRAM on the planet, designed for applications that demand the maximum possible bandwidth between memory and processing. This performance is achieved by integrating TSV stacked memory die with logic in the same chip package. Micron’s extensive history in advanced memory packaging and stacking has made for a seamless entrance into the HBM market. Micron is committed to providing Ultra-Bandwidth Solutions, including HBM2E and future HBM technology.

Density

Select Density
  • 8GB
  • 16GB
Range: 8GB - 16GB
  • Bus Width
    x1024
  • Voltage
    1.2V
  • Op. Temp.
    0C to +95C
  • Bus Width
    x1024
  • Voltage
    1.2V
  • Op. Temp.
    0C to +95C
+