MT29F2G01ABBGDWB-IT

M79A; SLC; MT29F2G01ABBGDSF, MT29F2G01ABBGDWB, MT29F2G01ABBGDWB-IT, MT29F2G01ABBGDWB-IT:G

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.

Company statement regarding REACH SVHC compliance

Rev 2.0, MT29F2G01ABAGD12-AAT:G, MT29F2G01ABAGDSF-AAT:G, MT29F2G01ABAGD12-IT:G, MT29F2G01ABAGDSF-IT:G, MT29F2G01ABAGDWB-IT:G, MT29F2G01ABBGDSF-IT:G, MT29F2G01ABBGDWB-IT:G, MT29F4G01ADAGDSF-IT:G, MT29F4G01ADAGDWB-IT:G

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

This technical note presents effective design and use practices to help avoid potential problems.

This technical note explains the device features that enable NV-DDR2 and provides guidelines for system designs to enable I/O transfer rates of up to 400 MT/s using the NV-DDR2 interface.

Explanation of Micron packaging labels and procedures.

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.