Micron Enables Pervasive, Data-Driven Experiences

Backed by industry-leading technology, Micron is delivering a portfolio of products based on its 1-alpha (1α) DRAM and 176-layer 3D NAND technologies, enabling businesses around the globe to unleash incredibly rich data experiences and unrivaled productivity.

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Industry's first 1α DRAM technology

Micron's 1α node is the world's most advanced DRAM process technology, bringing greater reliability, higher memory density, improved power savings and best-in-class performance for applications across data center, automotive, intelligent edge, mobile and more. This technology also provides a solid foundation for future Micron product and memory innovations.

Discover 1α technology

Micron Delivers Industry’s First 1α DRAM Technology

Inside 1α — the World’s Most Advanced DRAM Process Technology


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Breakthrough 176-layer technology

The most technologically advanced NAND node in the market, Micron's industry-first 176-layer 3D NAND improves both read latency and write latency, enabling greater application performance across storage use cases spanning data center, intelligent edge and mobile devices.

Discover 176-layer NAND

Micron delivers the world's most advanced 176-layer NAND data center SSD with significant reduction in latency

Micron Transitions to Next-Generation Replacement Gate NAND Technology


Turning process technology leadership to leading products across all markets

Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.

  • 1α DRAM — 40% higher memory density1 for feeding data-hungry workloads and expanding AI deployments
  • 176-layer 3D NAND — 35% improved read and write latency2 for accelerating application performance
  • 176-layer 3D NAND — 33% faster data transfer rates3 for faster server system bootup and application performance

Learn more about Micron's data center solutions 

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1 40% improvement in memory density when compared to Micron's previous 1z DRAM node.

2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

3 33% improvement when compared to Micron’s prior two generations of 3D NAND (96-layer NAND and 128-layer NAND), which featured a maximum of 1,200 MT/s data transfer rates.


Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.

  • 1α DRAM — The promise of industry-leading reliability, ruggedness and longevity for safety-critical embedded, automotive and industrial solutions
  • 176-layer 3D NAND — Future delivery of 1,600 MT/s data transfer rates for near instant-on response times for in-vehicle systems
  • 176-layer 3D NAND — Future delivery of 35% improved read latency and write latency1 will ease bottlenecks in AI industrial edge devices

Learn more about Micron's edge solutions for automotive

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Watch video for Micron's edge solution on smart devices

1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.

  • 1α low-power DRAM — 15% improved power savings1, allowing 5G mobile users to perform more tasks without sacrificing battery life
  • 176-layer 3D NAND — 15% faster mixed workload performance2 for ultra-fast mobile computing, enhanced AI inference, and graphic-rich, real-time multiplayer gaming
  • Multichip packages (MCPs) — High-performance, high-density, low-power memory and storage in a single compact package, enabling smartphones to handle data-intensive 5G workloads with greater speed and energy efficiency

Learn more about Micron's mobile solutions

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1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.

  • Micron high performance DDR5 DRAM – with the performance and bandwidth needed by latest-generation multi-core CPUs
  • 1α low-power DRAM — 15% improved power savings1, enabling high-performance computing in small notebook form factors without sacrificing battery life
  • Micron PCIe Gen4 SSDs — PCIe Gen4 for data-intensive applications and flexible form factors for cutting-edge designs

Learn more about Micron's client solutions
Learn more about Micron’s new client SSDs

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115% power savings when compared to the previous 1z generation of Micron mobile DRAM.

Industry leaders share insights on emerging technologies and data-driven customer experiences.

AI, 5G, and IT: Key drivers for digital transformation

Linda Tsai discusses Advantech Industrial IoT solutions and collaboration with Micron to provide the trusted quality for innovative industrial applications.


Advancing technologies for the next-generation data center

Robert Hormuth of AMD highlights the need for memory and storage advancement to meet growing data center requirements.


Enabling exceptional smartphone user experiences

JC Hsu shares how customer focus and close collaboration with mobile ecosystem partners including Micron lead to innovation and superior customer experiences.


Enabling safer streets with AI and network-based vision

Bruno Fernandez Ruiz describes how Nexar gathers the inputs from millions of autos and applies edge-based AI to enable innovations in safety and smart transportation.


Advancing 3D vision through advanced software

Jake Hillard shows how Red Leader's edge computing platform is transforming 3D image sensing with 10x higher resolution, programmability and scale.


Taiwan and leadership in the worldwide semiconductor industry

Global, pervasive experiences require an innovative ecosystem, in which Micron and Taiwan both play critical roles.


News from Computex 2022

Micron Ventures Fund II Commits $200M for Deep Tech Startups

Micron’s venture capital team, Micron Ventures, will be investing $200M in deep tech startups with its Fund II. Building on the success of the initial AI Fund, Micron’s Fund II will target broader deep tech innovations.
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Micron’s New Crucial NVMe SSDs Offer Fast, Affordable Options to Consumers

Micron announced the forthcoming availability of two new consumer storage products, the Crucial® P3 Plus Gen4 NVMe™ and Crucial® P3 NVMe™ solid-state drives (SSDs), as an expansion of its award-winning Crucial NVMe SSD product portfolio.
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